OKACHI, Ryosuke, USUI, Masanori, MORI, Tomohiko, MURAMATSU, Junya, KUWAHARA, Makoto und KIKUTA, Daigo, 2025. The Modeling of Post-Annealing and Etching Processes of ALD Si O₂ Using Intermediate Variables Considering Digital Twin Model Reusability. IEEE Transactions on Semiconductor Manufacturing. 1 August 2025. Vol. 38, no. 3, p. 487-491. DOI 10.1109/TSM.2025.3579474.
Elsevier - Harvard (with titles)Okachi, R., Usui, M., Mori, T., Muramatsu, J., Kuwahara, M., Kikuta, D., 2025. The Modeling of Post-Annealing and Etching Processes of ALD Si O₂ Using Intermediate Variables Considering Digital Twin Model Reusability. IEEE Transactions on Semiconductor Manufacturing 38, 487-491. https://doi.org/10.1109/TSM.2025.3579474
American Psychological Association 7th editionOkachi, R., Usui, M., Mori, T., Muramatsu, J., Kuwahara, M., & Kikuta, D. (2025). The Modeling of Post-Annealing and Etching Processes of ALD Si O₂ Using Intermediate Variables Considering Digital Twin Model Reusability. IEEE Transactions on Semiconductor Manufacturing, 38(3), 487-491. https://doi.org/10.1109/TSM.2025.3579474
Springer - Basic (author-date)Okachi R, Usui M, Mori T, Muramatsu J, Kuwahara M, Kikuta D (2025) The Modeling of Post-Annealing and Etching Processes of ALD Si O₂ Using Intermediate Variables Considering Digital Twin Model Reusability.. IEEE Transactions on Semiconductor Manufacturing 38:487-491. https://doi.org/10.1109/TSM.2025.3579474
Juristische Zitierweise (Stüber) (Deutsch)Okachi, Ryosuke/ Usui, Masanori/ Mori, Tomohiko/ Muramatsu, Junya/ Kuwahara, Makoto/ Kikuta, Daigo, The Modeling of Post-Annealing and Etching Processes of ALD Si O₂ Using Intermediate Variables Considering Digital Twin Model Reusability., IEEE Transactions on Semiconductor Manufacturing 2025, 487-491.