• Operation Under High Ionizing...

Treffer: Operation Under High Ionizing Dose Rates of Gamma or X-Ray Radiation of a 10 µm Radiation Tolerant Global Shutter Pixel

Title:
Operation Under High Ionizing Dose Rates of Gamma or X-Ray Radiation of a 10 µm Radiation Tolerant Global Shutter Pixel
Authors:
Teixeira dos Santos, Pedro Nuno, Hafizh, Idham, Leroux, Paul, Meynants, guy
Source:
ISSN:1424-8220 ; Sensors, vol. 25 (22), Art.No. 6979.
Publisher Information:
Multidisciplinary Digital Publishing Institute (MDPI)
Publication Year:
2025
Subject Terms:
Science & Technology, Physical Sciences, Technology, Chemistry, Analytical, Engineering, Electrical & Electronic, Instruments & Instrumentation, CMOS image sensors, total ionizing dose (TID), global shutter, X-ray, gamma radiation, DARK CURRENT, CMOS, CAMERA, 0301 Analytical Chemistry, 0805 Distributed Computing, 0906 Electrical and Electronic Engineering, Analytical Chemistry, 4008 Electrical engineering, 4009 Electronics, sensors and digital hardware, 4606 Distributed computing and systems software
Document Type:
Fachzeitschrift article in journal/newspaper
File Description:
application/pdf
Language:
English
Relation:
https://lirias.kuleuven.be/handle/20.500.12942/776157; https://doi.org/10.3390/s25226979; https://pubmed.ncbi.nlm.nih.gov/41305186
DOI:
10.3390/s25226979
Availability:
https://lirias.kuleuven.be/handle/20.500.12942/776157
https://hdl.handle.net/20.500.12942/776157
https://lirias.kuleuven.be/retrieve/37ac5883-df1b-494f-b58b-cd003cced1dc
https://doi.org/10.3390/s25226979
https://pubmed.ncbi.nlm.nih.gov/41305186
Rights:
info:eu-repo/semantics/openAccess ; public ; https://creativecommons.org/licenses/by/4.0/
Accession Number:
edsbas.6AFB6239
Database:
BASE

Weitere Informationen

A 10 × 10 µm2 radiation-tolerant voltage-domain global shutter pixel with radiation-hardened by design (RHBD) device modification is developed to operate under high ionizing-dose rates and high total ionizing-dose (TID) levels. Therefore, a modified NMOS transistor layout is used in the pixel to achieve radiation hardness. The pixel design is demonstrated to operate up to 1 MGy or 100 Mrad (SiO2) TID with minimal degradation. The global shutter pixel also includes correlated double sampling (CDS) to reduce noise and the impact of the collected carriers generated by the flux of gamma or X-ray radiation. Combined with an external flash, global shutter operation allows short exposures, which limits the impact of radiation on dark current and dynamic range. The pixel is designed using 180 nm CMOS Image Sensor (CIS) technology. ; sponsorship: KU Leuven|IOF-C3/22/036 GLOSRAD ; status: Published online